| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| Series | TrenchMOS™ |
| JESD-609 Code | e4 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | NICKEL PALLADIUM GOLD |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Power Dissipation-Max | 6.9W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 6.9W |
| Turn On Delay Time | 37 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 4.4m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 4235pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 30.4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 4.5V |
| Rise Time | 62ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 26 ns |
| Turn-Off Delay Time | 54 ns |
| Continuous Drain Current (ID) | 30.4A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 30V |
| Drain-source On Resistance-Max | 0.0075Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |