| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Pin Count | 6 |
| Reference Standard | AEC-Q101; IEC-60134 |
| JESD-30 Code | R-PDSO-G6 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 445mW |
| Turn On Delay Time | 15 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.4 Ω @ 350mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 0.68nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Turn-Off Delay Time | 69 ns |
| Continuous Drain Current (ID) | 350mA |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 0.35A |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Ambient Temperature Range High | 150°C |
| Height | 1.1mm |
| RoHS Status | ROHS3 Compliant |