NVMFD5485NLWFT1G
| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 3 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 2.9W |
| Pin Count | 8 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Turn On Delay Time | 9.5 ns |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 44m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 26.6ns |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time (Typ) | 23.7 ns |
| Turn-Off Delay Time | 27.8 ns |
| Continuous Drain Current (ID) | 5.3A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet