NUS5530MNR2G
| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 8-VDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 8 |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Applications | General Purpose |
| Voltage - Rated | 35V PNP 20V P-Channel |
| Subcategory | Other Transistors |
| Current Rating (Amps) | 2A PNP 3.9A P-Channel |
| Max Power Dissipation | 2.5W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 3.9A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NUS5530MN |
| Pin Count | 8 |
| Number of Elements | 1 |
| Rise Time-Max | 55ns |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 635mW |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Transistor Type | NPN, P-Channel |
| Collector Emitter Voltage (VCEO) | 35V |
| Max Collector Current | 2A |
| Continuous Drain Current (ID) | -3.9A |
| Gate to Source Voltage (Vgs) | -35V |
| Max Frequency | 100MHz |
| Pulsed Drain Current-Max (IDM) | 20A |
| Collector Emitter Saturation Voltage | -100mV |
| DS Breakdown Voltage-Min | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Collector Base Voltage (VCBO) | -55V |
| Emitter Base Voltage (VEBO) | -5V |
| DC Current Gain-Min (hFE) | 100 |
| Drain to Source Resistance | 200Ohm |
| VCEsat-Max | 0.3 V |
| Fall Time-Max (tf) | 70ns |
| Height | 950μm |
| Length | 3.3mm |
| Width | 3.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet