NTTFS4C08NTWG
| Parameters | |
|---|---|
| Power Dissipation-Max | 820mW Ta 25.5W Tc |
| Element Configuration | Single |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 5.9m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1113pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 9.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 18.2nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 9.3A |
| Gate to Source Voltage (Vgs) | 20V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 18 Weeks |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
See Relate Datesheet