| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 1.13A |
| Gate to Source Voltage (Vgs) | -20V |
| Drain-source On Resistance-Max | 0.2Ohm |
| Drain to Source Breakdown Voltage | -30V |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Lifecycle Status | OBSOLETE (Last Updated: 1 week ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn80Pb20) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | -1.95A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 400mW Tj |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.25W |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 200m Ω @ 1.95A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 1.13A Ta |