NTMFS4854NST3G
| Parameters | |
|---|---|
| Drain Current-Max (Abs) (ID) | 15.2A |
| Drain to Source Breakdown Voltage | 25V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | CONSULT SALES OFFICE (Last Updated: 5 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | SENSEFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Pin Count | 8 |
| Number of Elements | 1 |
| Power Dissipation-Max | 900mW Ta 86.2W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.31W |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.5m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4830pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 15.2A Ta 149A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 11.5V |
| Rise Time | 54ns |
| Drive Voltage (Max Rds On,Min Rds On) | 3.2V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 45 ns |
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | 24.4A |
| Gate to Source Voltage (Vgs) | 16V |
See Relate Datesheet