NTHD5904NT1G
| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 65m Ω @ 3.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 465pF @ 16V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| Rise Time | 17ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 17 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 4.5A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain-source On Resistance-Max | 0.065Ohm |
| Drain to Source Breakdown Voltage | 20V |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 3.3A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Power Dissipation-Max | 640mW Ta |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.13W |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
See Relate Datesheet