NSTB1002DXV5T1
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-553 |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | BUILT IN BIAS RESISTOR RATIO IS 1 |
| Subcategory | BIP General Purpose Small Signal |
| Max Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 100mA |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 5 |
| JESD-30 Code | R-PDSO-F5 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN AND PNP |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Collector Emitter Voltage (VCEO) | 250mV |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V / 100 @ 1mA 10V |
| Current - Collector Cutoff (Max) | 500nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA / 400mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 40V |
| Voltage - Collector Emitter Breakdown (Max) | 50V 40V |
| Current - Collector (Ic) (Max) | 100mA 200mA |
| Transition Frequency | 250MHz |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 47k Ω |
| Resistor - Emitter Base (R2) | 47k Ω |
| Turn Off Time-Max (toff) | 300ns |
| Turn On Time-Max (ton) | 70ns |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet