NP100P04PDG-E1-AY
| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 15100pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 320nC @ 10V |
| Rise Time | 30ns |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 100 ns |
| Turn-Off Delay Time | 300 ns |
| Continuous Drain Current (ID) | 100A |
| Gate to Source Voltage (Vgs) | 20V |
| Pulsed Drain Current-Max (IDM) | 300A |
| DS Breakdown Voltage-Min | 40V |
| Avalanche Energy Rating (Eas) | 550 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 16 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Transistor Element Material | SILICON |
| Operating Temperature | 175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.8W Ta 200W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 38 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.5m Ω @ 50A, 10V |
See Relate Datesheet