Parameters | |
---|---|
Mounting Type | Chassis Mount |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Input Capacitance | 3.8nF |
Package / Case | E2 |
Turn On Time | 130 ns |
Number of Pins | 2 |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
Turn Off Time-Nom (toff) | 710 ns |
IGBT Type | NPT |
NTC Thermistor | No |
Input Capacitance (Cies) @ Vce | 3.8nF @ 25V |
RoHS Status | RoHS Compliant |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~125°C TJ |
Published | 2007 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 11 |
Terminal Finish | Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | UL REGONIZED |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 350W |
Terminal Position | UPPER |
Terminal Form | PIN/PEG |
Base Part Number | MWI |
Pin Count | 17 |
JESD-30 Code | R-XUFM-P11 |
Number of Elements | 6 |
Configuration | Three Phase Inverter |
Case Connection | ISOLATED |
Power - Max | 350W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 2.4V |
Max Collector Current | 90A |
Factory Lead Time | 26 Weeks |
Current - Collector Cutoff (Max) | 800μA |
Mount | Chassis Mount |
Collector Emitter Breakdown Voltage | 1.2kV |