MWI50-12E7
| Parameters | |
|---|---|
| Mounting Type | Chassis Mount |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 3.8nF |
| Package / Case | E2 |
| Turn On Time | 130 ns |
| Number of Pins | 2 |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
| Turn Off Time-Nom (toff) | 710 ns |
| IGBT Type | NPT |
| NTC Thermistor | No |
| Input Capacitance (Cies) @ Vce | 3.8nF @ 25V |
| RoHS Status | RoHS Compliant |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~125°C TJ |
| Published | 2007 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 11 |
| Terminal Finish | Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | UL REGONIZED |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 350W |
| Terminal Position | UPPER |
| Terminal Form | PIN/PEG |
| Base Part Number | MWI |
| Pin Count | 17 |
| JESD-30 Code | R-XUFM-P11 |
| Number of Elements | 6 |
| Configuration | Three Phase Inverter |
| Case Connection | ISOLATED |
| Power - Max | 350W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 2.4V |
| Max Collector Current | 90A |
| Factory Lead Time | 26 Weeks |
| Current - Collector Cutoff (Max) | 800μA |
| Mount | Chassis Mount |
| Collector Emitter Breakdown Voltage | 1.2kV |
See Relate Datesheet