MWI50-12E7

MWI50-12E7

MOD IGBT SIXPACK H-BRDG 1200V E2


  • Manufacturer: IXYS
  • Origchip NO: 401-MWI50-12E7
  • Package: E2
  • Datasheet: PDF
  • Stock: 664
  • Description: MOD IGBT SIXPACK H-BRDG 1200V E2 (Kg)

Details

Tags

Parameters
Mounting Type Chassis Mount
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 3.8nF
Package / Case E2
Turn On Time 130 ns
Number of Pins 2
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 50A
Turn Off Time-Nom (toff) 710 ns
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 3.8nF @ 25V
RoHS Status RoHS Compliant
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
Terminal Finish Tin (Sn) - with Nickel (Ni) barrier
Additional Feature UL REGONIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 350W
Terminal Position UPPER
Terminal Form PIN/PEG
Base Part Number MWI
Pin Count 17
JESD-30 Code R-XUFM-P11
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 350W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 90A
Factory Lead Time 26 Weeks
Current - Collector Cutoff (Max) 800μA
Mount Chassis Mount
Collector Emitter Breakdown Voltage 1.2kV
See Relate Datesheet

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