MWI300-12E9
| Parameters | |
|---|---|
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | E+ |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~125°C TJ |
| Packaging | Bulk |
| Published | 2010 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 17 |
| Terminal Finish | Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | UL RECOGNIZED |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 2.1kW |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | MWI |
| Pin Count | 29 |
| JESD-30 Code | R-XUFM-X17 |
| Qualification Status | Not Qualified |
| Number of Elements | 6 |
| Configuration | Three Phase |
| Case Connection | ISOLATED |
| Power - Max | 2100W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 2.4V |
| Max Collector Current | 530A |
| Current - Collector Cutoff (Max) | 1mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 22nF |
| Turn On Time | 280 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 300A |
| Turn Off Time-Nom (toff) | 770 ns |
| IGBT Type | NPT |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 22nF @ 25V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet