MWI25-12A7

MWI25-12A7

Trans IGBT Module N-CH 1.2KV 50A 24-Pin E2-Pack


  • Manufacturer: IXYS
  • Origchip NO: 401-MWI25-12A7
  • Package: E2
  • Datasheet: PDF
  • Stock: 309
  • Description: Trans IGBT Module N-CH 1.2KV 50A 24-Pin E2-Pack (Kg)

Details

Tags

Parameters
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 225W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 50A
Current - Collector Cutoff (Max) 2mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 1.65nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 25A
Turn Off Time-Nom (toff) 570 ns
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 1.65nF @ 25V
RoHS Status ROHS3 Compliant
Factory Lead Time 16 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case E2
Number of Pins 2
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 225W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number MWI
Pin Count 20
JESD-30 Code R-XUFM-X11
Number of Elements 6
See Relate Datesheet

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