MWI100-12E8
| Parameters | |
|---|---|
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | E3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~125°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 11 |
| Terminal Finish | Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | UL RECOGNIZED |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 640W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Base Part Number | MWI |
| Pin Count | 19 |
| JESD-30 Code | R-XUFM-X11 |
| Number of Elements | 6 |
| Configuration | Three Phase Inverter |
| Case Connection | ISOLATED |
| Power - Max | 640W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 2.5V |
| Max Collector Current | 165A |
| Current - Collector Cutoff (Max) | 1.4mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 7.4nF |
| Turn On Time | 345 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 100A |
| Turn Off Time-Nom (toff) | 795 ns |
| IGBT Type | NPT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 7.4nF @ 25V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet