 
    | Parameters | |
|---|---|
| Peak Reverse Current | 2μA | 
| Max Repetitive Reverse Voltage (Vrrm) | 200V | 
| Capacitance @ Vr, F | 27pF @ 4V 1MHz | 
| Peak Non-Repetitive Surge Current | 40A | 
| Max Forward Surge Current (Ifsm) | 40A | 
| Recovery Time | 25 ns | 
| Reverse Voltage (DC) | 200V | 
| Natural Thermal Resistance | 15 °C/W | 
| Height | 2.42mm | 
| Length | 4.57mm | 
| Width | 3.94mm | 
| Radiation Hardening | No | 
| REACH SVHC | No SVHC | 
| RoHS Status | ROHS3 Compliant | 
| Lead Free | Lead Free | 
| Factory Lead Time | 12 Weeks | 
| Contact Plating | Tin | 
| Mount | Surface Mount | 
| Mounting Type | Surface Mount | 
| Package / Case | DO-214AA, SMB | 
| Number of Pins | 2 | 
| Weight | 92.986436mg | 
| Diode Element Material | SILICON | 
| Packaging | Tape & Reel (TR) | 
| Published | 2011 | 
| JESD-609 Code | e3 | 
| Pbfree Code | no | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 2 | 
| ECCN Code | EAR99 | 
| Max Operating Temperature | 175°C | 
| Min Operating Temperature | -55°C | 
| Capacitance | 60pF | 
| Subcategory | Rectifier Diodes | 
| Voltage - Rated DC | 200V | 
| Terminal Position | DUAL | 
| Terminal Form | C BEND | 
| Peak Reflow Temperature (Cel) | 260 | 
| Current Rating | 1A | 
| Time@Peak Reflow Temperature-Max (s) | 40 | 
| Base Part Number | MURS120 | 
| Pin Count | 2 | 
| Number of Elements | 1 | 
| Element Configuration | Single | 
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | 
| Diode Type | Standard | 
| Current - Reverse Leakage @ Vr | 2μA @ 200V | 
| Output Current | 1A | 
| Voltage - Forward (Vf) (Max) @ If | 875mV @ 1A | 
| Forward Current | 1A | 
| Operating Temperature - Junction | -55°C~175°C | 
| Max Surge Current | 40A | 
| Application | EFFICIENCY | 
| Forward Voltage | 875mV | 
| Max Reverse Voltage (DC) | 200V | 
| Average Rectified Current | 1A | 
| Number of Phases | 1 | 
| Reverse Recovery Time | 25 ns |