MUBW50-12E8
| Parameters | |
|---|---|
| Operating Temperature | -40°C~125°C TJ |
| Packaging | Box |
| Published | 2003 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 35 |
| Terminal Finish | Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 350W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | MUBW |
| Pin Count | 35 |
| Qualification Status | Not Qualified |
| Number of Elements | 7 |
| Configuration | Three Phase Inverter with Brake |
| Case Connection | ISOLATED |
| Power - Max | 350W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Three Phase Bridge Rectifier |
| Collector Emitter Voltage (VCEO) | 2.4V |
| Max Collector Current | 90A |
| Current - Collector Cutoff (Max) | 800μA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Reverse Voltage | 1.6kV |
| Input Capacitance | 3.8nF |
| Turn On Time | 130 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
| Turn Off Time-Nom (toff) | 710 ns |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 3.8nF @ 25V |
| RoHS Status | RoHS Compliant |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | E3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
See Relate Datesheet