MUBW35-12E7

MUBW35-12E7

Discrete Semiconductor Modules 35 Amps 1200V


  • Manufacturer: IXYS
  • Origchip NO: 401-MUBW35-12E7
  • Package: E2
  • Datasheet: PDF
  • Stock: 150
  • Description: Discrete Semiconductor Modules 35 Amps 1200V (Kg)

Details

Tags

Parameters
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MUBW
Pin Count 24
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 225W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 52A
Current - Collector Cutoff (Max) 400μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Mount Chassis Mount
Reverse Voltage 1.6kV
Mounting Type Chassis Mount
Input Capacitance 2nF
Turn On Time 135 ns
Package / Case E2
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 35A
Turn Off Time-Nom (toff) 490 ns
IGBT Type NPT
Number of Pins 2
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2nF @ 25V
RoHS Status RoHS Compliant
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 20
Terminal Finish Tin (Sn) - with Nickel (Ni) barrier
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 225W
Terminal Position UPPER
See Relate Datesheet

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