MUBW10-06A6
| Parameters | |
|---|---|
| Mounting Type | Chassis Mount |
| Package / Case | E1 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 25 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | FAST |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | MUBW |
| Pin Count | 25 |
| JESD-30 Code | R-XUFM-X25 |
| Qualification Status | Not Qualified |
| Number of Elements | 7 |
| Configuration | Three Phase Inverter with Brake |
| Case Connection | ISOLATED |
| Power - Max | 45W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Three Phase Bridge Rectifier |
| Current - Collector Cutoff (Max) | 20μA |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 11A |
| Power Dissipation-Max (Abs) | 45W |
| Turn On Time | 80 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 6A |
| Turn Off Time-Nom (toff) | 325 ns |
| IGBT Type | NPT |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 0.435nF @ 25V |
| VCEsat-Max | 2.5 V |
See Relate Datesheet