MS1003
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | OBSOLETE (Last Updated: 1 month ago) |
| Mount | Surface Mount, Through Hole |
| Mounting Type | Surface Mount |
| Package / Case | M111 |
| Transistor Element Material | SILICON |
| Operating Temperature | 200°C TJ |
| Packaging | Bulk |
| Published | 2004 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Additional Feature | WITH EMITTER BALLASTED RESISTORS |
| Max Power Dissipation | 270W |
| Terminal Position | UNSPECIFIED |
| Terminal Form | FLAT |
| Pin Count | 3 |
| JESD-30 Code | O-PXFM-F6 |
| Number of Elements | 1 |
| Element Configuration | Common Cathode |
| Power - Max | 270W |
| Forward Current | 10A |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Max Collector Current | 20A |
| Peak Reverse Current | 250μA |
| Max Repetitive Reverse Voltage (Vrrm) | 30V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 5A 5V |
| Collector Emitter Breakdown Voltage | 18V |
| Gain | 6dB |
| Peak Non-Repetitive Surge Current | 225A |
| Frequency - Transition | 136MHz~175MHz |
| Highest Frequency Band | VERY HIGH FREQUENCY B |
| Collector-Base Capacitance-Max | 390pF |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet