MRF1517NT1
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Package / Case | PLD-1.5 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Voltage - Rated | 25V |
| HTS Code | 8541.29.00.75 |
| Subcategory | FET General Purpose Power |
| Current Rating (Amps) | 4A |
| Terminal Position | QUAD |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Frequency | 520MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MRF1517 |
| JESD-30 Code | R-PQSO-N4 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Current - Test | 150mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Gain | 14dB |
| Drain Current-Max (Abs) (ID) | 4A |
| DS Breakdown Voltage-Min | 25V |
| Power - Output | 8W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 62.5W |
| Voltage - Test | 7.5V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet