| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Bulk |
| Published | 2008 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| HTS Code | 8541.21.00.75 |
| Max Power Dissipation | 350mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Max Collector Current | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA 10V |
| Collector Emitter Breakdown Voltage | 20V |
| Current - Collector (Ic) (Max) | 50mA |
| Transition Frequency | 600MHz |
| Frequency - Transition | 600MHz |
| Highest Frequency Band | VERY HIGH FREQUENCY B |
| Collector-Base Capacitance-Max | 0.85pF |
| RoHS Status | RoHS Compliant |