MMIX1G120N120A3V1
| Parameters | |
|---|---|
| Factory Lead Time | 30 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 24-PowerSMD, 21 Leads |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Series | GenX3™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 400W |
| Input Type | Standard |
| Power - Max | 400W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.2V |
| Max Collector Current | 220A |
| Reverse Recovery Time | 700 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Test Condition | 960V, 100A, 1 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 100A |
| IGBT Type | PT |
| Gate Charge | 420nC |
| Current - Collector Pulsed (Icm) | 700A |
| Td (on/off) @ 25°C | 40ns/490ns |
| Switching Energy | 10mJ (on), 33mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet