MKI50-12E7

MKI50-12E7

Discrete Semiconductor Modules IGBT (NPT3) 1200V 50A


  • Manufacturer: IXYS
  • Origchip NO: 401-MKI50-12E7
  • Package: E2
  • Datasheet: PDF
  • Stock: 394
  • Description: Discrete Semiconductor Modules IGBT (NPT3) 1200V 50A (Kg)

Details

Tags

Parameters
Factory Lead Time 24 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E2
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Packaging Box
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Additional Feature UL REGONIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 350W
Terminal Position UPPER
Terminal Form PIN/PEG
Base Part Number MKI
Pin Count 17
JESD-30 Code R-XUFM-P8
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Turn On Delay Time 80 ns
Power - Max 350W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Turn-Off Delay Time 680 ns
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 90A
Current - Collector Cutoff (Max) 800μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 3.8nF
Turn On Time 130 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 50A
Turn Off Time-Nom (toff) 710 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.8nF @ 25V
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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