MIO600-65E11
| Parameters | |
|---|---|
| Factory Lead Time | 25 Weeks |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | E11 |
| Number of Pins | 11 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~125°C TJ |
| Packaging | Bulk |
| Published | 2011 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 9 |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Base Part Number | MIO |
| Pin Count | 9 |
| JESD-30 Code | R-XUFM-X9 |
| Number of Elements | 3 |
| Configuration | Single Switch |
| Case Connection | ISOLATED |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 4.2V |
| Max Collector Current | 600A |
| Current - Collector Cutoff (Max) | 120mA |
| Collector Emitter Breakdown Voltage | 6.5kV |
| Voltage - Collector Emitter Breakdown (Max) | 6500V |
| Input Capacitance | 150nF |
| Max Breakdown Voltage | 6.5kV |
| Vce(on) (Max) @ Vge, Ic | 4.2V @ 15V, 600A |
| IGBT Type | NPT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 150nF @ 25V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet