| Parameters | |
|---|---|
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 83m Ω @ 1.5A, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 375pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 4.5V |
| Rise Time | 26ns |
| Factory Lead Time | 8 Weeks |
| Drain to Source Voltage (Vdss) | 20V |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Package / Case | 3-SMD, Flat Lead |
| Vgs (Max) | ±10V |
| Number of Pins | 3 |
| Fall Time (Typ) | 37 ns |
| Weight | 124.596154mg |
| Turn-Off Delay Time | 42 ns |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Continuous Drain Current (ID) | 3A |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Gate to Source Voltage (Vgs) | 10V |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Drain Current-Max (Abs) (ID) | 3A |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| DS Breakdown Voltage-Min | 20V |
| Number of Terminations | 3 |
| RoHS Status | ROHS3 Compliant |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Lead Free | Lead Free |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Reach Compliance Code | not_compliant |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 1W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 8.1 ns |
| FET Type | P-Channel |