| Parameters | |
|---|---|
| Continuous Drain Current (ID) | 18.1A |
| Gate to Source Voltage (Vgs) | -8V |
| Gain | 19.22dB |
| Power - Output | 500W |
| Voltage - Test | 50V |
| RoHS Status | RoHS Compliant |
| Package / Case | Ceramic |
| Packaging | Bulk |
| Published | 2013 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 95°C |
| Min Operating Temperature | -40°C |
| Voltage - Rated | 65V |
| Subcategory | FET RF Small Signal |
| Max Power Dissipation | 583W |
| Current Rating | 18.1A |
| Frequency | 1.2GHz~1.4GHz |
| Current - Test | 400mA |
| Drain to Source Voltage (Vdss) | 175V |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | HEMT |