| Parameters | |
|---|---|
| Surface Mount | YES |
| Transistor Element Material | GALLIUM NITRIDE |
| Packaging | Bulk |
| Published | 2011 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Voltage - Rated | 65V |
| Current Rating (Amps) | 8.6A |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 2 |
| JESD-30 Code | R-CDFM-F2 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Current - Test | 250mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | HEMT |
| Gain | 18.6dB |
| Drain Current-Max (Abs) (ID) | 14.2A |
| Power - Output | 250W |
| FET Technology | HIGH ELECTRON MOBILITY |
| Voltage - Test | 50V |
| Highest Frequency Band | L B |
| RoHS Status | RoHS Compliant |