LSIC1MO120E0080
| Parameters | |
|---|---|
| Factory Lead Time | 25 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C~150°C |
| Packaging | Tube |
| Published | 2017 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | SiCFET (Silicon Carbide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Power Dissipation-Max | 179W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 20A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1825pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 39A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 95nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On,Min Rds On) | 20V |
| Vgs (Max) | +22V, -6V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet