| Parameters | |
|---|---|
| Factory Lead Time | 23 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-72-3 Metal Can |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| Series | Military, MIL-PRF-19500/343 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | MIL-19500/343 |
| JESD-30 Code | O-MBCY-W4 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 200mW |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA 1V |
| Gain | 12.5dB ~ 21dB @ 450MHz |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Current - Collector (Ic) (Max) | 40mA |
| Frequency - Transition | 500MHz |
| Power Dissipation-Max (Abs) | 0.2W |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B |
| Collector-Base Capacitance-Max | 1pF |
| Noise Figure (dB Typ @ f) | 4.5dB @ 450MHz |
| RoHS Status | Non-RoHS Compliant |