JANTXV1N6492
| Parameters | |
|---|---|
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-205AF Metal Can |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| Published | 1997 |
| Series | Military, MIL-PRF-19500/567 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 2mA @ 45V |
| Voltage - Forward (Vf) (Max) @ If | 560mV @ 2A |
| Forward Current | 1.2A |
| Operating Temperature - Junction | -65°C~175°C |
| Current - Average Rectified (Io) | 3.6A |
| Forward Voltage | 680mV |
| Peak Reverse Current | 2mA |
| Max Repetitive Reverse Voltage (Vrrm) | 45V |
| Capacitance @ Vr, F | 450pF @ 5V 1MHz |
| Peak Non-Repetitive Surge Current | 80A |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet