 
    | Parameters | |
|---|---|
| Mount | Through Hole | 
| Mounting Type | Through Hole | 
| Package / Case | TO-254-3, TO-254AA (Straight Leads) | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Bulk | 
| Published | 1997 | 
| Series | Military, MIL-PRF-19500/592 | 
| JESD-609 Code | e0 | 
| Part Status | Obsolete | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 3 | 
| ECCN Code | EAR99 | 
| Terminal Finish | Tin/Lead (Sn/Pb) | 
| Additional Feature | AVALANCHE RATED | 
| Subcategory | FET General Purpose Powers | 
| Technology | MOSFET (Metal Oxide) | 
| Terminal Position | SINGLE | 
| Terminal Form | PIN/PEG | 
| Pin Count | 3 | 
| JESD-30 Code | S-MSFM-P3 | 
| Qualification Status | Qualified | 
| Number of Elements | 1 | 
| Configuration | SINGLE | 
| Power Dissipation-Max | 4W Ta 150W Tc | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 4W | 
| Case Connection | ISOLATED | 
| FET Type | N-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 415m Ω @ 14A, 10V | 
| Vgs(th) (Max) @ Id | 4V @ 250μA | 
| Current - Continuous Drain (Id) @ 25°C | 14A Tc | 
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V | 
| Drain to Source Voltage (Vdss) | 400V | 
| Drive Voltage (Max Rds On,Min Rds On) | 10V | 
| Vgs (Max) | ±20V | 
| Continuous Drain Current (ID) | 14A | 
| Gate to Source Voltage (Vgs) | 20V | 
| Pulsed Drain Current-Max (IDM) | 56A | 
| DS Breakdown Voltage-Min | 400V | 
| Avalanche Energy Rating (Eas) | 700 mJ | 
| Radiation Hardening | No | 
| RoHS Status | Non-RoHS Compliant |