JAN2N5665
| Parameters | |
|---|---|
| Configuration | SINGLE |
| Power Dissipation | 2.5W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 300V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A 5V |
| Current - Collector Cutoff (Max) | 200nA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 5A |
| Collector Base Voltage (VCBO) | 400V |
| Emitter Base Voltage (VEBO) | 6V |
| RoHS Status | Non-RoHS Compliant |
| Factory Lead Time | 22 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 4 weeks ago) |
| Contact Plating | Lead, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-213AA, TO-66-2 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| Series | Military, MIL-PRF-19500/455 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Max Power Dissipation | 2.5W |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 2 |
| JESD-30 Code | O-MBFM-P2 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
See Relate Datesheet