IXYA8N90C3D1
| Parameters | |
|---|---|
| Factory Lead Time | 28 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Weight | 1.946308g |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2014 |
| Series | GenX3™, XPT™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 125W |
| Reach Compliance Code | not_compliant |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 125W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.5V |
| Max Collector Current | 20A |
| Reverse Recovery Time | 114 ns |
| Collector Emitter Breakdown Voltage | 900V |
| Collector Emitter Saturation Voltage | 2.5V |
| Test Condition | 450V, 8A, 30 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 8A |
| Gate Charge | 13.3nC |
| Current - Collector Pulsed (Icm) | 48A |
| Td (on/off) @ 25°C | 16ns/40ns |
| Switching Energy | 460μJ (on), 180μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet