IXXN200N60B3
| Parameters | |
|---|---|
| Factory Lead Time | 28 Weeks |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Published | 2013 |
| Series | XPT™, GenX3™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Additional Feature | UL RECOGNIZED |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 940W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| JESD-30 Code | R-PUFM-X4 |
| Number of Elements | 1 |
| Configuration | Single |
| Case Connection | ISOLATED |
| Power - Max | 940W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.7V |
| Max Collector Current | 280A |
| Current - Collector Cutoff (Max) | 50μA |
| Collector Emitter Breakdown Voltage | 600V |
| Input Capacitance | 9.97nF |
| Turn On Time | 140 ns |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 100A |
| Turn Off Time-Nom (toff) | 395 ns |
| IGBT Type | PT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 9.97nF @ 25V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet