| Parameters | |
|---|---|
| Td (on/off) @ 25°C | 50ns/160ns |
| Switching Energy | 3.35mJ (on), 1.9mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.5V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 28 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Series | GenX3™, XPT™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 2.3kW |
| Input Type | Standard |
| Power - Max | 2300W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2V |
| Max Collector Current | 510A |
| Collector Emitter Breakdown Voltage | 600V |
| Test Condition | 400V, 100A, 1 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 100A |
| IGBT Type | PT |
| Gate Charge | 438nC |
| Current - Collector Pulsed (Icm) | 1075A |