Parameters | |
---|---|
Factory Lead Time | 24 Weeks |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2012 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Reach Compliance Code | not_compliant |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 113W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 113W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 750 Ω @ 10mA, 10V |
Vgs(th) (Max) @ Id | 6.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 256pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 200mA Tc |
Gate Charge (Qg) (Max) @ Vgs | 10.4nC @ 10V |
Rise Time | 48ns |
Drain to Source Voltage (Vdss) | 4500V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 143 ns |
Turn-Off Delay Time | 28 ns |
Continuous Drain Current (ID) | 200mA |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.2A |
Drain-source On Resistance-Max | 625Ohm |
Drain to Source Breakdown Voltage | 4.5kV |
Pulsed Drain Current-Max (IDM) | 0.6A |
RoHS Status | ROHS3 Compliant |