IXTK60N50L2
| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | Linear L2™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 960W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 960W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 24000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 60A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 610nC @ 10V |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Continuous Drain Current (ID) | 60A |
| Threshold Voltage | 2.5V |
| DS Breakdown Voltage-Min | 500V |
| Nominal Vgs | 2.5 V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet