IXTH80N65X2
| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Manufacturer Package Identifier | IXTH80N65X2 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2015 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Channels | 1 |
| Power Dissipation-Max | 890W Tc |
| Power Dissipation | 890W |
| Turn On Delay Time | 36 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 40m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds | 7753pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 144nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Turn-Off Delay Time | 72 ns |
| Continuous Drain Current (ID) | 80A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 650V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 25.66mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet