IXSN35N100U1
| Parameters | |
|---|---|
| Max Collector Current | 38A |
| Current - Collector Cutoff (Max) | 750μA |
| Collector Emitter Breakdown Voltage | 1kV |
| Voltage - Collector Emitter Breakdown (Max) | 1000V |
| Input Capacitance | 4.5nF |
| Turn On Time | 230 ns |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 25A |
| Turn Off Time-Nom (toff) | 2800 ns |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 4.5nF @ 25V |
| Gate-Emitter Thr Voltage-Max | 8V |
| RoHS Status | RoHS Compliant |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Number of Pins | 4 |
| Weight | 38.000013g |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Published | 1996 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Terminal Finish | Nickel (Ni) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 205W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | Single |
| Case Connection | ISOLATED |
| Power - Max | 205W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 3.5V |
See Relate Datesheet