IXSA10N60B2D1
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Weight | 1.59999g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 100W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 20A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IXS*10N60 |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 100W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Rise Time | 30ns |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 20A |
| Reverse Recovery Time | 25 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Turn On Time | 60 ns |
| Test Condition | 480V, 10A, 30 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A |
| Turn Off Time-Nom (toff) | 530 ns |
| IGBT Type | PT |
| Gate Charge | 17nC |
| Current - Collector Pulsed (Icm) | 30A |
| Td (on/off) @ 25°C | 30ns/180ns |
| Switching Energy | 430μJ (off) |
| Height | 4.5mm |
| Length | 9.9mm |
| Width | 9.2mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet