IXGR50N90B2D1
| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | ISOPLUS247™ |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | HiPerFAST™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN SILVER COPPER |
| Max Power Dissipation | 100W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IXG*50N90 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Power - Max | 100W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 900V |
| Max Collector Current | 40A |
| Reverse Recovery Time | 200 ns |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 900V |
| Collector Emitter Saturation Voltage | 2.9V |
| Test Condition | 720V, 50A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 50A |
| IGBT Type | NPT |
| Gate Charge | 135nC |
| Current - Collector Pulsed (Icm) | 200A |
| Td (on/off) @ 25°C | 20ns/350ns |
| Switching Energy | 4.7mJ (off) |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet