IXGR24N120C3D1
| Parameters | |
|---|---|
| Reverse Recovery Time | 220 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 3.6V |
| Turn On Time | 54 ns |
| Test Condition | 600V, 20A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 4.2V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 430 ns |
| IGBT Type | PT |
| Gate Charge | 79nC |
| Current - Collector Pulsed (Icm) | 96A |
| Td (on/off) @ 25°C | 16ns/93ns |
| Switching Energy | 1.37mJ (on), 470μJ (off) |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 30 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | ISOPLUS247™ |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | GenX3™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Power Dissipation | 200W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IXG*24N120 |
| Pin Count | 247 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200W |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 4.2V |
| Max Collector Current | 48A |
See Relate Datesheet