IXGQ50N60B4D1
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2011 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Additional Feature | LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 300W |
| Reach Compliance Code | unknown |
| Pin Count | 2 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.8V |
| Max Collector Current | 100A |
| Reverse Recovery Time | 25 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.4V |
| Turn On Time | 76 ns |
| Test Condition | 400V, 36A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 36A |
| Turn Off Time-Nom (toff) | 500 ns |
| IGBT Type | PT |
| Gate Charge | 110nC |
| Current - Collector Pulsed (Icm) | 230A |
| Td (on/off) @ 25°C | 37ns/330ns |
| Switching Energy | 930μJ (on), 1mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet