IXGP30N60B4D1
| Parameters | |
|---|---|
| Collector Emitter Breakdown Voltage | 600V |
| Turn On Time | 53 ns |
| Test Condition | 400V, 24A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 24A |
| Turn Off Time-Nom (toff) | 511 ns |
| IGBT Type | PT |
| Gate Charge | 77nC |
| Current - Collector Pulsed (Icm) | 156A |
| Td (on/off) @ 25°C | 21ns/200ns |
| Switching Energy | 440μJ (on), 700μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| RoHS Status | RoHS Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Additional Feature | LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 190W |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 190W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.7V |
| Max Collector Current | 56A |
| Reverse Recovery Time | 30 ns |
| JEDEC-95 Code | TO-220AB |
See Relate Datesheet