IXGM30N60
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-204AE |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | BOTTOM |
| Terminal Form | PIN/PEG |
| JESD-30 Code | O-MBFM-P2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Rise Time-Max | 200ns |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 200W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Reverse Recovery Time | 200ns |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 50A |
| Power Dissipation-Max (Abs) | 200W |
| Turn On Time | 300 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Turn Off Time-Nom (toff) | 1100 ns |
| Gate Charge | 180nC |
| Current - Collector Pulsed (Icm) | 100A |
| Td (on/off) @ 25°C | 100ns/500ns |
| Gate-Emitter Voltage-Max | 30V |
| VCEsat-Max | 2.5 V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Power Dissipation Ambient-Max | 200W |
| Fall Time-Max (tf) | 2000ns |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet