IXGK100N170
| Parameters | |
|---|---|
| Factory Lead Time | 28 Weeks |
| Mount | Through Hole |
| Package / Case | TO-264 |
| Published | 2012 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Additional Feature | LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 830W |
| Case Connection | COLLECTOR |
| Turn On Delay Time | 35 ns |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 285 ns |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Max Collector Current | 600A |
| Collector Emitter Saturation Voltage | 2.5V |
| Turn On Time | 285 ns |
| Turn Off Time-Nom (toff) | 720 ns |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet