IXGH30N60A
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Packaging | Tube |
| Published | 1997 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Additional Feature | HIGH SPEED |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 200W |
| Base Part Number | IXG*30N60 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Rise Time-Max | 200ns |
| Element Configuration | Single |
| Power Dissipation | 200W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 100 ns |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 500 ns |
| Collector Emitter Voltage (VCEO) | 3V |
| Max Collector Current | 50A |
| Continuous Drain Current (ID) | 60A |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 600V |
| Drain to Source Breakdown Voltage | 600V |
| Turn On Time | 300 ns |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 30A |
| Drain to Source Resistance | 2.6Ohm |
| Turn Off Time-Nom (toff) | 850 ns |
| Gate-Emitter Voltage-Max | 30V |
| VCEsat-Max | 3 V |
| Gate-Emitter Thr Voltage-Max | 5V |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet