IXGB75N60BD1
| Parameters | |
|---|---|
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2002 |
| Series | HiPerFAST™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 360W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 360W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 120A |
| Reverse Recovery Time | 50ns |
| Collector Emitter Breakdown Voltage | 600V |
| Turn On Time | 133 ns |
| Test Condition | 480V, 75A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 75A |
| Turn Off Time-Nom (toff) | 600 ns |
| Gate Charge | 248nC |
| Current - Collector Pulsed (Icm) | 300A |
| Td (on/off) @ 25°C | 62ns/220ns |
| Switching Energy | 3.3mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.5V |
| RoHS Status | RoHS Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
See Relate Datesheet