IXFN180N25T
| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 168A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 345nC @ 10V |
| Drain to Source Voltage (Vdss) | 250V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 168A |
| Drain Current-Max (Abs) (ID) | 164A |
| Drain-source On Resistance-Max | 0.0129Ohm |
| Pulsed Drain Current-Max (IDM) | 500A |
| DS Breakdown Voltage-Min | 250V |
| Avalanche Energy Rating (Eas) | 3000 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 30 Weeks |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2009 |
| Series | GigaMOS™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | NICKEL |
| Additional Feature | UL RECOGNIZED, AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PUFM-X4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 900W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 12.9m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds | 28000pF @ 25V |
See Relate Datesheet