IXBT12N300HV
| Parameters | |
|---|---|
| Factory Lead Time | 24 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | BIMOSFET™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 160W |
| Reach Compliance Code | unknown |
| Input Type | Standard |
| Power - Max | 160W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 3.2V |
| Max Collector Current | 30A |
| Reverse Recovery Time | 1.4 μs |
| Collector Emitter Breakdown Voltage | 3kV |
| Voltage - Collector Emitter Breakdown (Max) | 3000V |
| Test Condition | 1250V, 12A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 12A |
| Gate Charge | 62nC |
| Current - Collector Pulsed (Icm) | 100A |
| Td (on/off) @ 25°C | 64ns/180ns |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet